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STC6NF30V
N-channel 30V - 0.020 - 6A - TSSOP8 2.5V-drive STripFETTM II Power MOSFET
General features
Type STC6NF30V

VDSS 30V
RDS(on) < 0.025 (@ 4.5 V) < 0.030 (@ 2.7 V)
ID 6A
Ultra low threshold gate drive (2.5V) Standard outline for easy automated surface mount assembly Double dice in common drain configuration
TSSOP8
Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance.
Internal schematic diagram
Applications
Switching application
Order code
Part number STC6NF30V Marking C6NF30V Package TSSOP8 Packaging Tape & reel
February 2007
Rev 4
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Contents
STC6NF30V
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STC6NF30V
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Storage temperature Max. Operating Junction Temperature Value 30 20 12 6 3.8 24 1.5 -55 to 150 -55 to 150 Unit V V V A A A W C C
PTOT Tstg TJ
1. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal data
Parameter Value 100 (1) 83.5
(2)
Unit C/W C/W
RthJ-PBC Thermal resistance junction-PBC Max RthJ-PBC Thermal resistance junction-PBC Max
2. When Mounted on minimum recommended footprint
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t = 10 sec.
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Electrical characteristics
STC6NF30V
2
Electrical characteristics
(TJ = 25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 12V VDS= VGS, ID = 250A VGS= 4.5V, ID= 3A VGS =2.5V, ID = 3A 0.6 0.020 0.025 0.025 0.030 Min. 30 1 10 100 Typ. Max. Unit V A A nA V
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 10V, ID = 6A VDS =25V, f = 1 MHz, VGS = 0 VDD =15V, ID = 6A VGS = 2.5V Figure 16 on page 9 Min. Typ. 18 800 180 32 6.8 2.0 3.4 9 Max. Unit S pF pF pF nC nC nC
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15V, ID = 3A, RG = 4.7, VGS = 2.5V Figure 14 on page 9 Min. Typ. 20 25 32 13 Max. Unit ns ns ns ns
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STC6NF30V
Electrical characteristics
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6A, VGS = 0 ISD = 6A, di/dt = 100A/s, VDD = 15V, TJ = 150C Figure 16 on page 9 25 21 1.7 Test conditions Min. Typ. Max 6 24 1.2 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STC6NF30V
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STC6NF30V Figure 7. Gate charge vs. gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized breakdown voltage temperature
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Electrical characteristics Figure 13. Thermal resistance and max power
STC6NF30V
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STC6NF30V
Test circuit
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load switching and diode recovery times
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Package mechanical data
STC6NF30V
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STC6NF30V
Package mechanical data
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Revision history
STC6NF30V
5
Revision history
Table 7.
Date 21-Jun-2004 03-Aug-2006 01-Feb-2007
Revision history
Revision 2 3 4 Complete document The document has been reformatted, SOA updated Typo mistake on first page Changes
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STC6NF30V
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